Radiation Effects On Semiconductor Catalysts

Item

Title
Radiation Effects On Semiconductor Catalysts
Date
1962
Index Abstract
Coming Soon
Photo Quality
Complete
Report Number
ASD TDR 62-233
Creator
Sosnovosky, H.C.
Corporate Author
Armour Research Foundation
Laboratory
Directorate of Materials and Processes
Extent
33
Identifier
AD0291844
Access Rights
OTS
Distribution Classification
1
Contract
AF 33(616)-7740
DoD Project
7360
DoD Task
736003
DTIC Record Exists
No
Distribution Change Authority Correspondence
None
Report Availability
Full text available
Date Issued
1962-10
Abstract
The effect of ion bombardment on carrier lifetime, photoconductivity, and surface structure of germanium (111) crystals was investigated after bombardment at voltages between 10 and 2000 v. It was found that the lifetime decreased significantly at bombarding voltages above 80 v and that the number of defects in the surface region increased simultaneously by several orders of magnitudes. These defects are most likely dislocations and vacancy clusters. Less stable defects were introduced at very low bombarding voltages but these too were found to affect the electrical properties of the bombarded surfaces appreciably. Preliminary results of the effect of absorbed gasses on the properties of ion bombarded surfaces, and the effect of neutron bombardment on the catalytic exchange of hydrogen with deuterium on etched surfaces are included.
AD Number
AD-291 844
Index In
U.S. Government Research Reports, Vol. 38, No. 6, p. 60
Index Price
$1.00
Provenance
Lockheed Martin Missiles & Fire Control
Type
report
Format
1 online resource
Item sets
Illinois Tech Related
Media
ASDTDR62-233.pdf