Title

Transient Radiation Effects On Hall Devices

Date

1964

Index Abstract

Coming Soon

Photo Quality

Complete

Report Number

AFWL TDR 64-38

Creator

Meyer, LeRoy

Cates, Harold

Grannemann, W. W.

Corporate Author

New Mexico Univ Albuquerque

Laboratory

Air Force Weapons Laboratory

Extent

60

Identifier

AD0442579

Access Rights

DDC

Distribution Classification

1

Contract

AF 29(601)-5976

DoD Project

8812

DTIC Record Exists

No

Distribution Change Authority Correspondence

AFWL LTR

Date Modified

Scanned by request 8/23/2007 submitted by National Archive Publishing Company (Other Industry - Domestic)

Abstract

A review of the basic theory of Hall effect and Hall effect devices as related to transient radiation effects is presented. The theory predicts that any transient effect in the Hall voltage output during gamma irradiation of the device depends on the type of biasing used. There is no change in Hall voltage output for constant voltage bias, but the Hall voltage varies as a function of 1/n for constant current bias. The transient radiation effects are small and usually within the noise level for dose rates up to 10 to the 7th power r/sec. Some experimental data have been obtained using the AFWL 600-kv flash X ray and WSMR 8-Mev Linac that support the theory. Both thin film and crystal devices were used. The thin film devices appear to have a wider range of frequency response and are more radiation resistant.

Report Availability

Full text available

Date Issued

1964-06

Provenance

Lockheed Martin Missiles & Fire Control

Type

report

Format

1 online resource