Title

Lattice Defects in Germanium and Silicon and Their Effect on Electrical Properties

Creator

Copeland, P. L.

Madigan, J. R.

Fiegel, L. J.

Date

1957

Identifier

AD0120422

AD0120422

Abstract

The equilibrium barrier height of a p-n junction rectifier was measured as a function of temperature from 77° to 373°. The barrier height was determined by observing the saturation of the open circuit junction decays voltage with increasing forward bias. The height of the barrier at a given temperature is equal to the original difference in Fermi levels in the isolated n- and p- regions of the diode. At low temperatures it should,
therefore, approach the energy gap and should tend to zero at high temperatures as both regions approach intrinsic material. Measurements on silicon alloy junction diodes are in general agreement with this predicted behavior and because of the heavy doping of the emitter
essentially describe the behavior of the Fermi level in the base region.

Date Issued

1957-02-15

Corporate Author

Illinois Inst. of Tech. Lab. of Physical Electronics

Report Number

AFOSR-TN-57-78

AD Number

AD 120422

Contract

AF 18(600)643

Index In

Air Force Scientific Research Bibliography 1957-1958 (1964), p. 276

Distribution Classification

2

DTIC Record Exists

No

Report Availability

Not available via Contrails

Type

report