Title

Properties of Sulfide Semiconductors

Date

1959

Identifier

AD0208757

AD0208757

Abstract

The fabrication of metal-sulfide type semiconductors and their properties were studied; emphasis was placed on As2Te3 and Sb2Se3. An As2Te3 sample with an impurity of 1.9% Sb showed a Hall mobility of 6650 sq cm/volt-sec with a relativity of 5.53 x 10^-4 ohm-cm and carrier destiny of 0.17x10^19 at room temperature. The mobility value is more than an order of magnitude larger than that of any other sample studied. Samples of As2Te3 and Sb2Se3 were characterized by measuring sample resistivity as a function of temperature up to 300 degrees C, together with Hall effect measurements at room temperature. The results indicated that (1) from 71 degrees to 258 degrees C the variation of carrier concentration with temperature is insignificant compared to the change of carrier mobility, and (2) the observed increase of sample resistivity with increasing temperature is mainly due to decreasing carrier mobility caused by lattice scattering of the charge carrier. Specimen resistivity values vs temperature data indicated that temperatures sufficiently high for intrinsic activation energy calculations were not reached.

Date Issued

1959-02

Extent

18

Corporate Author

Illinois Inst. of Tech. Armour Research Foundation

Report Number

AFOSR-TR-59-4

PB Number

PB138738

AD Number

AD 208757

Contract

AF 49(638)112

Distribution Conflict

Yes

Index In

Air Force Scientific Research Bibliography 1959 (1965), p. 165

Distribution Classification

2

DTIC Record Exists

No

Report Availability

Not available via Contrails

Type

report