Title

Semiconductor Diode Performance in Nuclear Radiation Environments

Date

1962

Index Abstract

Coming Soon

Photo Quality

Complete

Report Number

ASD TDR 62-12

Creator

Hamre, Harlan G.

McElroy, William N.

Barrell, Raymond C.

Corporate Author

Armour Research Foundation

Laboratory

Deputy Commander for Test and Support

Extent

86

Identifier

AD0281796

Access Rights

OTS

Distribution Classification

1

Contract

AF 33(616)-7329

DoD Project

1448

DoD Task

42023

DTIC Record Exists

No

Distribution Change Authority Correspondence

None

Abstract

Performance characteristics were determined for two types of general purpose diodes, and for five types of microwave diodes, in radiation environments equivalent to at least 1000 hours' exposure to 10 to the 10th neutron/sq cm-sec and 2 times 10 to the 5th Rad/hour. None of the units studied showed satisfactory performance characteristics after this exposure, although the germanium 1N263 point-contact diode was degraded less than others investigated, and still exhibited measurable properties following the exposure. Results, although not conclusive, seem to indicate that energizing the microwave mixers at X-band (9375 Mc) during radiation is helpful in prolonging the life of the units.

The abstract for this report is either unavailable or has yet to be entered

Report Availability

Full text available

Date Issued

1962-05

Provenance

Lockheed Martin Missiles & Fire Control

Type

report

Format

1 online resource