Semiconductor Diode Performance in Nuclear Radiation Environments

Item

Title
Semiconductor Diode Performance in Nuclear Radiation Environments
Date
1962
Index Abstract
Coming Soon
Photo Quality
Complete
Report Number
ASD TDR 62-12
Creator
Hamre, Harlan G.
McElroy, William N.
Barrell, Raymond C.
Corporate Author
Armour Research Foundation
Laboratory
Deputy Commander for Test and Support
Extent
86
Identifier
AD0281796
Access Rights
OTS
Distribution Classification
1
Contract
AF 33(616)-7329
DoD Project
1448
DoD Task
42023
DTIC Record Exists
No
Distribution Change Authority Correspondence
None
Abstract
Performance characteristics were determined for two types of general purpose diodes, and for five types of microwave diodes, in radiation environments equivalent to at least 1000 hours' exposure to 10 to the 10th neutron/sq cm-sec and 2 times 10 to the 5th Rad/hour. None of the units studied showed satisfactory performance characteristics after this exposure, although the germanium 1N263 point-contact diode was degraded less than others investigated, and still exhibited measurable properties following the exposure. Results, although not conclusive, seem to indicate that energizing the microwave mixers at X-band (9375 Mc) during radiation is helpful in prolonging the life of the units.
The abstract for this report is either unavailable or has yet to be entered
Report Availability
Full text available
Date Issued
1962-05
Provenance
Lockheed Martin Missiles & Fire Control
Type
report
Format
1 online resource